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Freescale Semiconductor Technical Data
Document Number: MHPA18010N Rev. 4, 5/2006
CDMA Band RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA and GSM modulation systems. * Typical CDMA Performance: 1840 MHz, 28 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 * Adjacent Channel Power: - 51 dBc @ 30 dBm Average Power, 885 kHz Channel Spacing * Power Gain: 24.5 dB Min (@ f = 1840 MHz) Features * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * N Suffix Indicates Lead - Free Terminations
MHPA18010N
1805- 1880 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 3
Table 1. Maximum Ratings (TC = 25C unless otherwise noted)
Rating DC Supply Voltage RF Input Power (Single Carrier CW) Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +20 - 40 to +100 - 20 to +100 Unit Vdc dBm C C
Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS 8 V Set for Supply Current of 600 mA, TC = 25C, 50 System)
Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Noise Figure (f = 1840 MHz) (f = 1805 - 1880 MHz) (f = 1840 MHz) (f = 1805 - 1880 MHz) (f = 1840 MHz) Symbol IDD Gp GF P1dB VSWRin NF ACPR Min -- 24.5 -- -- -- -- -- Typ 600 25.5 0.2 41.5 1.5:1 8 - 58 Max -- -- 0.5 -- 2:1 10 - 51 dB dBc Unit mA dB dB dBm
Adjacent Channel Power Rejection @ 30 dBm Average Power, 1.23 MHz BW, 885 kHz Channel Spacing
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHPA18010N 1
RF Device Data Freescale Semiconductor
NOTES
MHPA18010N 2 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A G 0.020 (0.51)
M
A S
2X
Q 0.008 (0.20)
M
TS
M
A
M
TA
M
B
R J K W
4X 1 2 3 4
S
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC RF INPUT VBIAS VDD RF OUTPUT GROUND MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC
D
M
0.020 (0.51)
M
TB
N L H F E C T
SEATING PLANE
4X
P 0.020 (0.51)
M
T
STYLE 3: PIN 1. 2. 3. 4. CASE:
CASE 301AP - 02 ISSUE E
MHPA18010N RF Device Data Freescale Semiconductor 3
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RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
MHPA18010N 4Rev. 4, 5/2006
Document Number: MHPA18010N
RF Device Data Freescale Semiconductor

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